# Comparison of application characteristics of Shangyangtong high-speed IGBT and MOSFET

“Shangyangtong launched 650V trench gate field effect cut-off ultra-high-speed (FSU) series IGBT. This series of products is optimized for high-frequency switching power supply applications; it reduces switching losses compared with traditional solutions, and is a cost-effective solution to replace MOSFET products. In practical applications, because the IGBT has a tail current, it is often used at frequencies of 40kHz and below.

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Shangyangtong launched 650V trench gate field effect cut-off ultra-high-speed (FSU) series IGBT. This series of products is optimized for high-frequency switching power supply applications; it reduces switching losses compared with traditional solutions, and is a cost-effective solution to replace MOSFET products. In practical applications, because the IGBT has a tail current, it is often used at frequencies of 40kHz and below.

By comparing the SnowMOSTM B series products and IGBT products, and analyzing the dynamic and static parameters and waveforms of the devices, we can better understand the characteristics of Shangyangtong’s products. The following is a comparison table of static and dynamic parameters of Shangyangtong MOSFET SRC65R042BT-G and IGBT SRE50N065FSUD6T-G products:

As can be seen from the above table, the static parameters of the two products are equivalent; but the actual IGBT is the on-voltage drop characteristic, and the MOSFET is the on-resistance characteristic. According to the actual static data, the conduction loss vs. on-current curve of the two is calculated as follows. It can be seen that at small currents, the MOSFET losses are relatively small; at high currents, the IGBT conduction losses are small.

The dynamic parameters Qg, Cies and Coes of Shangyangtong IGBT SRE50N065FSUD6T are smaller than B series MOSFETs. This can improve drive losses in switching power supply designs and also allow for the use of more cost-effective drive lines.

The actual test turn-off loss curve is shown in the figure above. In the case of small current, the MOSFET turn-off loss is better; in the case of high current, the IGBT turn-off loss is slightly better. From the characteristics of the comprehensive conduction loss, it can be seen that MOSFET is suitable for medium and low power and high frequency operation, while IGBT is more suitable for medium and high power and low frequency operation.

Taking the traditional PFC line as an example, the current switching waveform of the main power device is shown in the figure above. Based on this waveform, the loss distribution using MOSFETs and IGBTs, respectively, is evaluated as follows:

It can be seen that the total loss of the MOSFET at 130kHz is slightly less than that of the IGBT at 45kHz. MOSFET is beneficial to increase the operating frequency of the system and reduce the volume of the system; IGBT is a more cost-effective solution under low frequency operation.

The Links: **BSM150GAL100D** **LTM10C209H**